650V E-Mode GaN-Mosfet from WAYON ELECTRONICS
Achieving the market demand for higher efficiency and higher power density Si-Transistors are often limited by physics. WAYON with its wide-bandgap material with low parasitic influence and therefore low static and dynamic losses as well as the small temperature influence on the device parameters is able to fulfill this market demand. Because of WAYONs´ deep manufacturing experience and the use of appropriate substrate material it´s possible to use volume effects for reaching a high cost efficiency and market availability.
WAYON is starting this new family with three 650V devices with channel resistances of 450mOhm, 225mOhm and 150mOhm packed in highly integrated PDFN5060-8L packages. For supporting the design-in of this technology there are different evaluation boards available on request.
For more information please contact TRS-STAR by mail to info@trs-star.com.
TRS-STAR GmbH
Werner von Siemens Straße 1
76297 Stutensee
Telefon: +49 (7249) 95222-0
Telefax: +49 (7249) 95222-199
http://www.trs-star.com
Marcom360
Telefon: +49 (7083) 933745
E-Mail: edgar.huber@marcom360.de
