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X-FAB Introduces New Generation of Enhanced Performance SPAD Devices focused on Near-Infrared Applications
X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry, has introduced a specific near-infrared version to its single-photon avalanche diode (SPAD) device portfolio. Like the previous SPAD generation, which launched in 2021, this version is based on the company’s 180nm XH018 process. The inclusion of an additional step to the fabrication workflow has resulted in significant increases in signal while still retaining the same low noise floor, without negatively affecting parameters such as dark count rate, afterpulsing and breakdown voltage. Through this latest variant, X-FAB is successfully expanding the scope of its SPAD offering, improving its ability to address numerous emerging applications where NIR operation proves critically important. Among…
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X-FAB adds CMOS integration option to its galvanic isolation solution
X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry, is making further significant progress with its galvanic isolation technology. Building on X-FAB’s 2018 introduction of its advanced process optimized for robust discrete capacitive or inductive couplers, the process can now be used to bring existing galvanic isolation elements directly together with active circuits based on its XA035 technology. This integrated approach allows more flexibility in the design of isolation products, addressing emerging opportunities in renewable energy, EV powertrains, factory automation, and industrial power. Based on a 350nm process node, XA035 is highly suited to the fabrication of automotive sensors and high-voltage industrial devices. The high-voltage signal isolation capabilities it now supports mean long-term operational performance is…
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Lizenzvereinbarung zwischen X-FAB und IHP Leibniz-Institut führt zu innovativer 130-nm-SiGe-BiCMOS-Plattform
X-FAB Silicon Foundries, die führende Spezial-Foundry, gibt den weiteren Ausbau ihrer langjährigen Partnerschaft mit dem Leibniz-Institut für innovative Mikroelektronik (IHP; Institute for High Performance Microelectronics) bekannt. Im Rahmen einer neuen Vereinbarung lizenziert X-FAB die hochmoderne SiGe-Technologie des IHP. Damit stehen die Leistungsvorteile dieser Technologie auch für Kunden mit Großserienfertigung zur Verfügung. Die neu geschaffene 130-nm-Plattform stärkt das Technologieportfolio von X-FAB und bietet eine einzigartige Lösung, die die hohen Leistungsparameter erzielt, die für kommende Anforderungen im Bereich Kommunikationstechnik erforderlich sind. Beispiele für Anwendungen, die von dieser Technologie profitieren, sind Wi-Fi 6 (und zukünftig Wi-Fi 7) Access Points (APs), kommende Mobilfunk-Infrastrukturen (insbesondere 5G mmWave und baldige 6G-Standards) und die Vehicle-to-Vehicle-/V2V-Kommunikation. Die Technologie…
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Attopsemi’s I-fuse™ Memory Solution Now Qualified and Available on X-FAB’s 130nm RF-SOI Technology
X-FAB Silicon Foundries, the leading analog/mixed-signal and specialty foundry, together with Attopsemi, innovator of I-fuse™ one-time programmable (OTP) IP solutions, have entered into a collaboration to satisfy the memory requirements of 5G technology. The companies have announced successful qualification of Attopsemi’s I-fuse OTP memory in relation to X-FAB’s XR013 open-platform foundry 130nm RF-SOI technology. This qualification will allow customers to benefit from the incorporation of a compact (<0.2mm2 surface area) and robust OTP block into the core XR013 technology module, but without requiring additional or custom processing. Read operation is possible at both 2.5V and 1.8V for MIPI compatibility. X-FAB’s XR013 is a feature rich, open-platform, 130nm technology that is…
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Jörg Doblaski takes on the role of X-FAB CTO
X-FAB Silicon Foundries SE has today announced the appointment of Jörg Doblaski as its new Chief Technology Officer (CTO). He fills the role of former CTO Dr. Jens Kosch, who is becoming an X-FAB Fellow and will serve as an adviser to the company’s CEO Rudi De Winter. Doblaski joined X-FAB in 2004 and since then has held various positions in engineering and management. Prior to becoming CTO, he was Director of Design Support, and helped to build up the company’s extensive portfolio of highly advanced IP. He was also responsible for driving development of X-FAB’s feature-rich design kits, which significantly accelerate time-to-market and assure first-time-right implementation. Doblaski has a…
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X-FAB Further Expands its SiC Capacity and Adds New In-House Epitaxy Capabilities
X-FAB Silicon Foundries SE continues to drive the adoption of silicon-carbide (SiC) technology forward by offering SiC foundry services at the scale of silicon. The company has confirmed that it is the first pure-play foundry to add internal SiC epitaxy capabilities to its offering. With X-FAB’s proven ability to run silicon and SiC on the same manufacturing line, customers have access to high-quality and cost-effective foundry solutions. In line with the growing demand, X-FAB is committed to further expand its SiC capacity and, with the 26k wafers per month capacity at its Lubbock facility, has the right platform to meet its customers’ needs. By offering an in-house epitaxy capability, X-FAB…
